Week 1 - nMOSFET and Inverter Characteristics

nMOSFET EQs

A diagram for the following is shown below:

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Pasted image 20240117115140.png

Kn=KnWL,Kn=μnCox=μnϵoxtox,IG=0,IB=0

Cutoff Region, when VGSVtn:

VGSVtnID=0

Triode Region*, when VGSVtnVDS0:

ID=Kn((VGSVtn)VDS12VDS2)

Saturation Region, when VDSVGSVtn=VOV0. If ideal, then λ=0:

ID=Kn2(VGSVtn)2(1+λVDS)

The Threshold Voltage Vtn is calculated via:

Vtn=Vto+γ(vSB+2ϕF2ϕF)

Where ϕF is the flat-band voltage of the ENMOS, seen in [[EE 306 MOSFETs Equation Sheet Fall 2023.pdf]], and γ is the Body-effect parameter for the ENMOS.

Inverter Characteristics

NML=VILVOL

NMH=VOHVIH V10%=VL+0.1ΔVV90%=VL+0.9ΔV=VH0.1ΔVΔV=VHVL V50%=VH+VL2τP=τPLH+τPHL2 PDP=PτP